带金属凸点阵列结构的倒装发光二极管及其制作方法

Flip-chip light emitting diode with metal convex spot array structure and its producing method

Abstract

The preparation method includes steps: providing a heat elimination base plate, and a LED chip with p, n poles, as well as salient point array of metal formed on p pole and n pole of the LED chip; electric insulative metal layers of p pole and n pole are formed on the heat elimination base plate; p pole and n pole on chip are corresponding to the metal layer of p pole and the metal layer of n pole on the heat elimination base plate; through salient point array of metal, two parts are bonded; applying pressure, ultrasonic, and heat to contacted salient point array of metal. The invention also discloses up-side-down mounted LED with structure of salient point array of metal. The disclosed LED is composed of heat elimination base plate, LED chip, and salient point array of metal.
本发明公开了一种带金属凸点阵列结构的倒装发光二极管的制作方法,包括提供一散热基板和具有p、n电极的LED芯片,还包括:在LED芯片的p电极和n电极上形成金属凸点阵列;在散热基板上分别形成电气绝缘的p电极金属层和n电极金属层;将LED芯片的p电极和n电极分别与散热基板上的p电极金属层、n电极金属层对应,两部分通过金属凸点阵列进行键合,并对相接触的金属凸点阵列加压、加超声、加热。本发明还包括带金属凸点阵列结构的倒装发光二极管,其组成为:散热基板,包括电气绝缘的n电极金属层和p电极金属层,位于基板之上;LED芯片,包括电气绝缘的n电极和p电极;金属凸点阵列,设置在LED芯片的n电极与散热基板上的n电极金属层,p电极与p电极金属层之间。

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Cited By (4)

    Publication numberPublication dateAssigneeTitle
    CN-101807644-AAugust 18, 2010厦门大学Preparation method of GaN-based light emitting diode (LED) with high light emitting efficiency
    CN-102646765-AAugust 22, 2012杭州士兰明芯科技有限公司一种led芯片及其相应的制作方法
    CN-103700752-AApril 02, 2014西安交通大学Salient point bonding structure of vertical structure LED chip and process
    CN-103700752-BDecember 07, 2016西安交通大学一种垂直结构led芯片的凸点键合结构及工艺