P沟道大功率半导体恒电流二极管及其制作方法

P-channel high power semiconductor constant-current diode and manufacturing method thereof

  • Inventors: QIAO LIU
  • Assignees: 贵州大学
  • Publication Date: July 18, 2007
  • Publication Number: CN-101000931-A

Abstract

This invention discloses a P-channel high-power semiconductor constant current diode and its manufacturing method, which takes JFET as the small constant current source to provide the constant base current to the bipolar transistor of current expansion, and forms a major constant current through proportional (linear) enlargement (expansion). The characteristic of this invention is to realize the constant current though the physical process of semiconductor structure, and not the technology of integrated circuit and electronic module (component). The invention has the function of using the semiconductor physical property to realize constant current circuit, and the merit of using the current expansion method to directly drive the load by constant current.
本发明公开了一种P沟道大功率半导体恒电流二极管及其制作方法,利用结型场效应管JFET作为小电流恒流源,向担任电流扩展的双极型晶体管提供恒定基极电流,经过双极型晶体管成比例(线性)放大(扩展)成为大恒定电流。本发明的特点是通过半导体器件结构的物理过程实现恒流特性,不是集成电路和电子模块(组件)的技术。本发明具有利用半导体物理特性、实现恒流电路的功能,而且结构简单,采用电流扩展方法可以直接恒流驱动负载的优点,表现于现有二极管的一些技术特征,也可以作为恒电流电源直接驱动负载。

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Cited By (5)

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    CN-101667575-BMay 01, 2013贵州大学Multichannel current extended type semiconductor constant-current diode
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    CN-102421224-BSeptember 25, 2013电子科技大学一种led驱动用自反馈线性恒流器
    CN-103426936-ADecember 04, 2013电子科技大学Vertical current regulative diode and manufacturing method thereof
    CN-103426936-BOctober 21, 2015电子科技大学一种垂直型恒流二极管及其制造方法